ll55c2v4-ll55c75 500mw zener diode features terminals: solderable per mil-std-202, method 208 polarity: cathode band approx. weight: 0.13 grams very sharp reverse characteristic low reverse current level very high stability low noise mechanical data characteristic symbol value unit test condition power dissipation p d 500 mw lead length = 4.0mm, t l = 25c zener current i z p d /v z ma thermal resistance, junction to ambient air r q ja 300 k/w lead length = 4.0mm, t l = constant forward voltage v f 1.5 v i f = 200ma operating and storage temperature range t j, t stg -65 to +175 c maximum ratings @ t a = 25c unless otherwise specified 1 of 3 ll55c2v4 - ll55c75 z ibo seno electronic engineering co., ltd. www.senocn.com case:ll-34 / minimelf, glass minimelf dim min max a 3.30 3.70 b 1.30 1.60 c 0.28 0.50 all dimensions in mm c a b lea d free: for rohs / lead free version a l l d a t a s h e e t
type number nominal zener voltage zener voltage range zener impedanc e zener impedance leakage current @ v r temperature coefficient v z @ i zt v z @ i zt z zt @ i zt z zt @ i zk i r @ t=25c i r @ t=150c v r (v) (ma) (v) (w ) (w ) (ma) (a) (a) (v) (%/k) ll55c2v4 2.4 5.0 2.28 to 2.56 < 85 < 600 1.0 < 50 < 100 1.0 -0.09 to -0.06 ll55c2v7 2.7 5.0 2.5 to 2.9 < 85 < 600 1.0 < 10 < 50 1.0 -0.09 to -0.06 ll55c3v0 3.0 5.0 2.8 to 3.2 < 85 < 600 1.0 < 4.0 < 40 1.0 -0.08 to -0.05 ll55c3v3 3.3 5.0 3.1 to 3.5 < 85 < 600 1.0 < 2.0 < 40 1.0 -0.08 to -0.05 ll55c3v6 3.6 5.0 3.4 to 3.8 < 85 < 600 1.0 < 2.0 < 40 1.0 -0.08 to -0.05 ll55c3v9 3.9 5.0 3.7 to 4.1 < 85 < 600 1.0 < 2.0 < 40 1.0 -0.08 to -0.05 ll55c4v3 4.3 5.0 4.0 to 4.6 < 75 < 600 1.0 < 1.0 < 20 1.0 -0.06 to - 0.03 ll55c4v7 4.7 5.0 4.4 to 5.0 < 60 < 600 1.0 < 0.5 < 10 1.0 -0.05 to +0.02 ll55c5v1 5.1 5.0 4.8 to 5.4 < 35 < 550 1.0 < 0.1 < 2.0 1.0 -0.02 to + 0.02 ll55c5v6 5.6 5.0 5.2 to 6.0 < 25 < 450 1.0 < 0.1 < 2.0 1.0 -0.05 to +0.05 ll55c6v2 6.2 5.0 5.8 to 6.6 < 10 < 200 1.0 < 0.1 < 2.0 2.0 0.03 to 0.06 ll55c6v8 6.8 5.0 6.4 to 7.2 < 8.0 < 150 1.0 < 0.1 < 2.0 3.0 0.03 to 0.07 ll55c7v5 7.5 5.0 7.0 to 7.9 < 7.0 < 50 1.0 < 0.1 < 2.0 5.0 0.03 to 0.07 ll55c8v2 8.2 5.0 7.7 to 8.7 < 7.0 < 50 1.0 < 0.1 < 2.0 6.2 0.03 to 0.08 ll55c9v1 9.1 5.0 8.5 to 9.6 < 10 < 50 1.0 < 0.1 < 2.0 6.8 0.03 to 0.09 LL55C10 10 5.0 9.4 to 10.6 < 15 < 70 1.0 < 0.1 < 2.0 7.5 0.03 to 0.10 ll55c11 11 5.0 10.4 to 11.6 < 20 < 70 1.0 < 0.1 < 2.0 8.2 0.03 to 0.11 ll55c12 12 5.0 11.4 to 12.7 < 20 < 90 1.0 < 0.1 < 2.0 9.1 0.03 to 0.11 ll55c13 13 5.0 12.4 to 14.1 < 26 < 110 1.0 < 0.1 < 2.0 10 0.03 to 0.11 ll55c15 15 5.0 13.8 to 15.6 < 30 < 110 1.0 < 0.1 < 2.0 11 0.03 to 0.11 ll55c16 16 5.0 15.3 to 17.1 < 40 < 170 1.0 < 0.1 < 2.0 12 0.03 to 0.11 ll55c18 18 5.0 16.8 to 19.1 < 50 < 170 1.0 < 0.1 < 2.0 13 0.03 to 0.11 ll55c20 20 5.0 18.8 to 21.2 < 55 < 220 1.0 < 0.1 < 2.0 15 0.03 to 0.11 ll55c22 22 5.0 20.8 to 23.3 < 55 < 220 1.0 < 0.1 < 2.0 16 0.04 to 0.12 ll55c24 24 5.0 22.8 to 25.6 < 80 < 220 1.0 < 0.1 < 2.0 18 0.04 to 0.12 ll55c27 27 5.0 25.1 to 28.9 < 80 < 220 1.0 < 0.1 < 2.0 20 0.04 to 0.12 ll55c30 30 5.0 28 to 32 < 80 < 220 1.0 < 0.1 < 2.0 22 0.04 to 0.12 ll55c33 33 5.0 31 to 35 < 80 < 220 1.0 < 0.1 < 2.0 24 0.04 to 0.12 ll55c36 36 5.0 34 to 38 < 80 < 220 1.0 < 0.1 < 2.0 27 0.04 to 0.12 ll55c39 39 2.5 37 to 41 < 90 < 500 0.5 < 0.1 < 5.0 30 0.04 to 0.12 ll55c43 43 2.5 40 to 46 < 90 < 600 0.5 < 0.1 < 5.0 33 0.04 to 0.12 ll55c47 47 2.5 44 to 50 < 110 < 700 0.5 < 0.1 < 5 36 0.04 to 0.12 ll55c51 51 2.5 48 to 54 < 125 < 700 0.5 < 0.1 < 10 39 0.04 to 0.12 ll55c56 56 2.5 52 to 60 < 135 < 1000 0.5 < 0.1 < 10 43 0.04 to 0.12 ll55c62 62 2.5 58 to 66 < 150 < 1000 0.5 < 0.1 < 10 47 0.04 to 0.12 ll55c68 68 2.5 64 to 72 < 200 < 1000 0.5 < 0.1 < 10 51 0.04 to 0.12 ll55c75 75 2.5 70 to 79 < 250 < 1500 0.5 < 0.1 < 10 56 0.04 to 0.12 electrical characteristics @ t a = 25c unless otherwise specified 2 of 3 z ibo seno electronic engineering co., ltd. www.senocn.com ll55c2v4-ll55c75 ll55c2v4 - ll55c75 a l l d a t a s h e e t
r , thermal resist ance juncti o n t o ambient (k/w) qja 0 100 200 300 400 500 0 5 10 15 20 l, lead length (mm) fig. 2, thermal resistance vs lead length 0 50 1 00 150 200 0 5 10 15 20 25 c , d i o d e c apacitance (pf) j v , z ener voltage (v) z fig. 3, diode capacitance vs zener voltage v = 2v r t = 25 c j 1 10 1 00 1000 0 5 10 15 20 25 di fferential zener re s i s ta n c e ( w ) v , z ener voltage (v) z fig. 4, differential zener impedance i = 1 ma z 5m a 10 ma t = 25 c j 0 10 0 200 300 400 500 0 40 80 120 160 200 p , t o t a l p o w e r dissipati o n ( m w) d t , a mbient temperature a fig.1, power dissipation vs ambient temperature 3 of 3 www.senocn.com z ibo seno electronic engineering co., ltd. ll55c2v4-ll55c75 ll55c2v4 - ll55c75 a l l d a t a s h e e t
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